Embedded Files
Quantum Conductance and Temperature Effects in Titanium Oxide-Based Memristive Devices
Quantum Conductance and Temperature Effects in Titanium Oxide-Based Memristive Devices
Itir Koymen
IEEE Transactions on Electron Devices
10.1109/TED.2024.3354868
Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks
Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks
Modeling and simulation of successive breakdown events in thin gate dielectrics using standard reliability growth models
Modeling and simulation of successive breakdown events in thin gate dielectrics using standard reliability growth models
A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
Enrique Miranda
Materials Science in Semiconductor Processing
Revealing the quantum nature of voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices
Revealing the quantum nature of voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices
Spice simulation of the time-dependent clustering model for dielectric breakdown
Spice simulation of the time-dependent clustering model for dielectric breakdown
Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires
Electrochemical rewiring through quantum conductance effects in single metallic memristive nanowires
Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
Effect of electrode materials on resistive switching behaviour of NbOx-based memristive devices
Tomography of memory engrams in self-organizing nanowire connectomes
Tomography of memory engrams in self-organizing nanowire connectomes
Memristive devices for metrological applications
Memristive devices for metrological applications
SPICE Simulation of Quantum Transport in Al2O3/HfO2-Based Antifuse Memory Cells
SPICE Simulation of Quantum Transport in Al2O3/HfO2-Based Antifuse Memory Cells
Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a
Exploring Conductance Quantization Effects in Electroformed Filaments for Their Potential Application to a
Resistance Standard
Resistance Standard
Resistive switching and role of interfaces in memristive devices based on amorphous NbOx by anodic oxidation
Resistive switching and role of interfaces in memristive devices based on amorphous NbOx by anodic oxidation
Variability in Resistive Memories
Variability in Resistive Memories
In materia implementation strategies of physical reservoir computing with memristive nanonetworks
In materia implementation strategies of physical reservoir computing with memristive nanonetworks
G. Milano, K. Montano, C. Ricciardi
Journal of Physics D: Applied Physics
Quantitative Element-Sensitive Analysis of Individual Nanoobjects
Quantitative Element-Sensitive Analysis of Individual Nanoobjects
Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks
Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks
Experimental and Modeling Study of Metal–Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices
Experimental and Modeling Study of Metal–Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive Devices
G. Milano, E. Miranda, I.Valov, C.Ricciardi
ACS Applied Materials and Interfaces
Traceable Characterization of Nanomaterials by X-ray Spectrometry Using Calibrated Instrumentation
Traceable Characterization of Nanomaterials by X-ray Spectrometry Using Calibrated Instrumentation
Memristive devices as a potential resistance standard
Memristive devices as a potential resistance standard
V. Cabral, A. Cultrera, S. Chen, J.Pereira, L. Ribeiro, I. Godinho, L. Boarino, N. De Leo, L. Callegaro, S.Cardoso, I. Valov, G. Milano
Proceedings: 25th IMEKO TC-4 International Symposium. IMEKO TC-4 2022
ISBN: 978-92-990090-1-7
ALTECH 2021–Analytical Techniques for Precise Characterization of Nano Materials
ALTECH 2021–Analytical Techniques for Precise Characterization of Nano Materials
L. Boarino, F. A. de Castro, P. Hönicke, Y. Kaiser and M. C. Lepy
Phisica Status Solidi A
DOI: 10.1002/pssa.202200130
Quantum conductance in memristive devices: fundamentals, developments, and applications
Quantum conductance in memristive devices: fundamentals, developments, and applications
Gianluca Milano, Luca Boarino, Umberto Celano, Sayani Majumdar, Mariela Menghini, Enrique Miranda, Carto Ricciardi, Stefan Tappertzhofen, Ilia Valov
Advanced Materials
DOI: 10.1002/adma.202201248
Connectome of memristive nanowire networks through graph theory
Connectome of memristive nanowire networks through graph theory
Gianluca Milano, Enrique Miranda, Carlo Ricciardi
Neural Networks
DOI: 10.1016/j.neunet.2022.02.022
SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices
SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices
In Materia Should Be Used Instead of In Materio
In Materia Should Be Used Instead of In Materio
Carlo Ricciardi, Gianluca Milano
Frontiers in Nanotechnology
DOI: 10.3389/fnano.2022.850561
Grid-Graph Modeling of Emergent Neuromorphic Dynamics and Heterosynaptic PLasticity in Memristive Nanonetworks
Grid-Graph Modeling of Emergent Neuromorphic Dynamics and Heterosynaptic PLasticity in Memristive Nanonetworks
Kevin Montano, Gianluca Milano, Carlo Ricciardi
Neuromorphic Computing and Engineering (2022)
DOI: 10.1088/2634-4386/ac4d86
2022 Roadmap on Neuromorphic Computing and Engineering
2022 Roadmap on Neuromorphic Computing and Engineering
Dennis V. Christensen, Regina Dittmann […] N. Pryds
Neuromorphic computing and Engineering (2022)
DOI: 10.1088/2634-4386/ac4a83
https://iopscience.iop.org/article/10.1088/2634-4386/ac4a83
Memristive devices based on single ZnO nanowires - from material synthesis to neuromorphic functionalities
Memristive devices based on single ZnO nanowires - from material synthesis to neuromorphic functionalities
Gianluca Milano, Luca Boarino, Ilia Valov, Carlo Ricciardi
Semiconductor Science and Technology
DOI: 10.1088/1361-6641/ac4b8a
https://iopscience.iop.org/article/10.1088/1361-6641/ac4b8a
Design of Materials Configuration for Optimizing Redox-Based Resistive Switching Memories
Design of Materials Configuration for Optimizing Redox-Based Resistive Switching Memories
Shaochuan Chen, Ilia ValoV
Advanced Materials, (2021)
https://onlinelibrary.wiley.com/doi/full/10.1002/adma.202105022
Assessment and Improvement of the Pattern Recognition Performance of Memdiode-Based Cross-Point Arrays with Randomly Distributed Stuck-at-faults
Assessment and Improvement of the Pattern Recognition Performance of Memdiode-Based Cross-Point Arrays with Randomly Distributed Stuck-at-faults
Fernando L. Aguirre, Sebastian M. Pazos, Félix Palumbo, Antoni Morell, Jordi Suné, Enrique Miranda
Electronics, (2021)
In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks
In materia reservoir computing with a fully memristive architecture based on self-organizing nanowire networks
Gianluca Milano, Giacomo Pedretti, Kevin Montano, Saverio Ricci, Shahin Hashemkhani, Luca Boarino, Daniele Ielmini & Carlo Ricciardi
Nature Materials, (2021)
SPICE Simulation of RRAM-Based Cross-POint Arrays Using the Dynamic Memdiode Model
SPICE Simulation of RRAM-Based Cross-POint Arrays Using the Dynamic Memdiode Model
Fernando L. Aguirre, Sebastian M. Pazos, Félix Palumbo, Jordi Sune, Enrique Miranda
Frontiers in Physics, (2022)
https://www.frontiersin.org/articles/10.3389/fphy.2021.735021/full
Structure‐Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films
Structure‐Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films
Milano, G., Luebben, M., Laurenti, M., Boarino, L., Ricciardi, C., & Valov, I. .
Advanced Materials Interfaces, 2100915 (2021)
https://onlinelibrary.wiley.com/doi/full/10.1002/admi.202100915
keywords:
Page updated
Report abuse